|Mosfet Amplifier 100 Watt RMS|
Saturday, April 21, 2012
At this time a unsophisticated MOSFET amplifier or else power Amp which Output power is plus/minus 100 Watt/RMS with 8 Ohms otherwise ohter plus/minus 160 Watts /RMS with 4 ohms.
Regarding this circuit simplicity, The distortion is plus/minus 0.1 %. In support of mob-width -3 db(decibel) is increase for 4 Hz to 96 Khz, it is narrow by C1, R1, C2 and R2. Taking part in the two transistors are T1 and T2 makes a initial differential stage part, So,current source(I) of +/- solitary mA is put with resistor R3. In favor of the upgraded project, The current source(I) is new efficient in stability. Coil P1 allows a fine tuning of dictate current voltage on amplifier’s output. Place the Coil P1 with it’s partially usefulness in favor of first power up, so therefore break it unhurriedly for a lowest DC output voltage. custom a essential quality compoment.
C1 = 2,2 µF MKP, MKT 100 in opposition to
C2 = 330 pF céramique 50 V
C3 = 100 nF MKP, MKT 100 in opposition to
C4 = 100 µF 40 V électro-chimique
C5, C6 = 18 pF céramique 50 vs.
C7 = 100 nF MKP, MKT 250 V (C8 = 47 µF 100 V)
R1, R3 = 47 K (R3 = 330 -> 470 Ohms)
R2 = 2K2
R4, R5 = 3K9
R6 = 1 K
R7 = 27 K
R8, R9, R11 = 100 ohms
R10 = 10 K
R12, R13 = 470 ohms
R14, R15 = 0.33 ohms 5 watts
R16 = 10 ohms 3 watts (R17 = 1 K R18, R19 = 10K)
T1, T2, T9,T10 = 2SD756A,2SD716A, BC556B (attention au brochage différent - take be concerned representing pin arrange)
T7 = IRFP240, 2SK1530, 2SJ162, BUZ900DP, BUZ901DP (attention au brochage dissimilar - take care for pin layout : GDS GSD)P1 = 100 ohms (25 turns - 25 turns)
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